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| G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and WORD WRITE access cycles via two WE pins. The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval. All inputs are TTL compatible. Fast Page Mode operation allows random access up to 256x16 bits, within a page, with cycle times as short as 18ns. The GLT41316 is best suited for graphics, and DSP applications requiring high performance memories. CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. 256 refresh cycles per 4ms. Available in 40-pin 400 mil SOJ,and 40/44 pin TSOP (II). Single 5.0V10% Power Supply. All inputs and Outputs are TTL compatible. Fast Page Mode operation. HIGH PERFORMANCE Max. RAS Access Time, (tRAC) Max. Column Address Access Time, (tAA) Min. Fast Page Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (tRC) Max. CAS Access Time (tCAC) 30 30 ns 15 ns 18 ns 65 ns 10 ns 35 35 ns 18 ns 21 ns 70 ns 11 ns 40 40 ns 20 ns 23 ns 75 ns 12 ns 45 45 ns 22 ns 25 ns 80 ns 12 ns G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -1- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Pin Configuration : GLT41316 SOJ Top View TSOP(Type II) Top View Pin Descriptions: Name A0 - A7 RAS CAS UW LW OE DQ0 - DQ15 VCC VSS NC Function Address Inputs Row Address Strobe Column Address Strobe Read / Upper Byte Write Enable Read / Lower Byte Write Enable Output Enable Data Inputs / Outputs +5V Power Supply Ground No Connection G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -2- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Absolute Maximum Ratings* Operating Temperature, TA (ambient) .......................................-0C to +70C Storage Temperature(plastic)....-55C to +150C Voltage Relative to VSS...............-1.0V to + 7.0V Short Circuit Output Current......................50mA Power Dissipation......................................1.0W Capacitance* TA=25C, VCC=5V10%, VSS=0V Symbol CIN1 CIN2 COUT Parameter Address Input RAS , CAS , UW , LW , OE Max. Unit 5 7 7 pF pF pF Data Input/Output *Note: Operation above Absolute Maximum Ratings *Note: Capacitance is sampled and not 100% tested can adversely affect device reliability. Electrical Specifications l l l WE means UW and LW . All voltages are referenced to GND. After power up, wait more than 100s and then, execute eight CAS -before- RAS or RAS -only refresh cycles as dummy cycles to initialize internal circuit. Block Diagram : G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -3- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Truth Table: GLT41316 Function Standby Read: Word Write: Word(Early Write) Write: Lower Byte (Early) Write: Upper Byte (Early) Read Write Fast-PageMode Read Fast-PageMode Write Fast-PageMode ReadWrite Hidden Refresh 2nd Cycle Read Write RAS -Only Refresh CBR Refresh L LHL LHL L HL HL L L H L HL H L X X HL H L X X LH L X X X COL Data-Out,Data-In 1,2 1 2,3 1st Cycle 2nd Cycle 1st Cycle 2nd Cycle 1st Cycle RAS H L L L L L L L L L L CAS HX L L L L L HL HL HL HL HL UW X H L H L HL H LW X H L L H HL H H OE X L X X X LH L L X X LH ADDRESS High-Z DQs Note s ROW/COL Data Out ROW/COL Data-In ROW/COL Lower Byte,Data-In Upper Byte,High-Z ROW/COL Lower Byte,High-Z Upper Byte,Data-In ROW/COL Data-Out,Data-In ROW/COL Data-Out COL Data-Out 1,2 1 1 2 2 1,2 L L HL L L HL ROW/COL Data-In COL Data-In ROW/COL Data-Out,Data-In ROW/COL Data-Out ROW/COL Data-In ROW High-Z High-Z Notes: 1. These READ cycles are always WORD READ cycles . 2. These WRITE cycles may also be BYTE READ cycles (either UW or LW active). 3. EARLY WRITE only. G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -4- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) DC and Operating Characteristics (1-2) TA = 0C to 70C, VCC=5V10%, VSS=0V, unless otherwise specified. Sym. ILI Parameter Input Leakage Current (any input pin) Output Leakage Current (for High-Z State) Operating Current, Random READ/WRITE Test Conditions 0V VIN 5.5V (All other pins not under test=0V) 0V Vout 5.5V Output is disabled (Hiz) tRC = tRC (min.) Access Time Min. -10 Typ Max. Unit Notes +10 A A ILO ICC1 -10 tRAC = 30ns tRAC = 35ns tRAC = 40ns tRAC = 45ns +10 180 170 160 150 4 mA 1,2 ICC2 ICC3 Standby Current,(TTL) Refresh Current, RAS-Only RAS , CAS at VIH other inputs VSS RAS cycling, CAS at mA mA 2 VIH tRC = tRC (min.) RAS at VIL, CAS , address cycling: tPC = tPC(min.) RAS , CAS , ICC4 Operating Current, EDO Page Mode ICC5 Refresh Current, CAS Before RAS address cycling: tRC = tRC (min.) RAS VCC-0.2V, CAS VCC-0.2V, tRAC = 30ns tRAC = 35ns tRAC = 40ns tRAC = 45ns tRAC = 30ns tRAC = 35ns tRAC = 40ns tRAC = 45ns tRAC = 30ns tRAC = 35ns tRAC = 40ns tRAC = 45ns 180 170 160 150 180 170 160 150 180 170 160 150 2 mA 1,2 mA 1 ICC6 Standby Current, (CMOS) mA All other inputs VSS VIL VIH VOL VOH Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage -1 2.4 IOL = 4.2mA IOH = -5mA 2.4 +0.8 VCC+1 0.4 V V V V 3 3 Notes: 1. ICC is dependent on output loading when the device output is selected. Specified ICC(max.) is measured with the output open. 2. ICC is dependent upon the number of address transitions specified ICC(max.) is measured with a maximum of one transition per address cycle in random Read/Write and Fast Page Mode. 3. Specified VIL(min.) is steady state operation. During transitions VIL(min.) may undershoot to -1.0V for a period not to exceed 20ns. All AC parameters are measured with VIL(min.)VSS and VIH(max.)VCC. G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -5- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) AC Characteristics (0 C TA 70 C, See note 1,2) Test condition:VCC=5.0V10%, VIH/VIL=2.4V/0.8V,VOH/VOL=2.4V/0.4V Parameter tRAC = 30 ns tRAC = 35 ns tRAC = 40 ns tRAC = 45 ns Symbo MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes l Read/Write Cycle Time Read Midify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address CAS to Output in Low-Z Output Buffer Turn-off Delay from CAS Transition Time(Rise and Fall) RAS Precharge Time RAS Pulse Width RAS Hold Time CAS Hold Time CAS Pulse Width RAS to CAS Delay Time RAS to Column Address Delay Time CAS to RAS Precharge Time Row Address Setup Time Row Address Hold Time Column Address Setup Time Column Address Hold Time Column Address Hold Time Referenced to RAS Column Address Lead Time Referenced to RAS Read Command Setup Time Read Command Hold Time Referenced to RAS Read Command Hold Time Referenced to CAS WE Hold Time Referenced to CAS Write Command Hold Time Referenced to RAS WE Pulse Width G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. tRC tRWC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC tCAH tAR tRAL tRCS tRRH tRCH tWCH tWCR tWP 65 80 0 3 3 25 30 10 30 10 13 10 5 0 7 0 6 26 15 0 0 0 6 26 6 30 10 15 8 50 100k 10000 20 15 - 70 99 0 3 3 25 35 12 36 12 17 12 5 0 7 0 6 30 18 0 0 0 6 30 6 35 11 18 8 50 100k 10000 24 17 - 75 105 0 3 3 25 40 12 40 12 18 13 5 0 8 0 6 34 20 0 0 0 6 34 6 40 12 20 8 50 100K 10000 28 20 - 80 110 0 3 3 25 45 13 46 13 18 13 5 0 8 0 6 39 23 0 0 0 6 39 6 45 12 22 8 50 - ns ns ns ns ns ns ns ns ns 3,4 3,4 3,4 3 7 2 100K ns ns ns 10000 ns 33 23 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 4 4 8 9 9 10 5 10 G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -6- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Parameter tRAC = 30 ns tRAC = 35 ns tRAC = 40 ns tRAC = 45 ns Symbo MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes l tRWL tCWL tDS tDH tDHR tWCS tRWD tCWD tAWD tCSR tCHR tRPC tCPT 10 10 0 7 27 0 47 24 29 5 10 5 20 18 48 5.5 30 25 8 3 6 15 18 100k 10 8 4 11 11 0 7 31 0 58 29 36 5 10 5 20 21 60 6 35 25 8 3 6 15 21 100k 11 8 4 12 12 0 8 36 0 63 30 38 5 10 5 20 23 63 7 40 25 8 3 7 15 23 100K WE Lead Time Referenced to RAS WE Lead Time Referenced to CAS Data-In Setup Time Data-In Hold Time Data Hold Time Referenced to RAS WE Setup Time RAS to WE Delay Time CAS to WE Delay Time Column Address to WE Delay Time CAS Setup Time( CAS before RAS Refresh) CAS Hold Time( CAS before RAS Refresh) RAS to CAS Precharge Time CAS Precharge Time(CBR Counter Test Cycle) 12 12 0 8 41 0 68 30 40 5 10 5 20 25 65 7 45 30 8 3 7 15 - 25 100K ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms 7 3 11 11 6 5 5 5 5 tCPA Access Time from CAS Precharge Fast Page mode Read/Write Cycle Time tPC Fast Page mode Read Modify Write tPRWC Cycle Time t CAS Precharge Time(Fast Page mode) CP tRASP RAS Pulse Width(Fast Page mode) tRHCP RAS Hold Time from CAS Precharge tOEA Access Time from OE tOED OE to Delay Time Output Buffer Turn-off Delay Time from tOEZ OE OE Hold Time WE Hold Time(Hidden Refresh Cycle) Refresh Time(256cycles) tOEH tWHR tREF 12 8 4 12 8 4 G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -7- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Notes 1. An initial pause of 100s is required after power-up followed by any 8 RAS only Refresh or CAS before RAS Refresh cycles to initialize the internal circuit. 2. VIH(min.) and VIL(min.) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min.) and VIL(max.), AC measurements assume tT = 3ns. 3. Measured with an equivalent to 2 TTL loads and 100pF. 4. For read cycles, the access time is defined as follows: Input Conditions tRAD tRAD(MAX.) and tRCD tRCD(MAX.) tRAD(max.)< tRAD and tRCD tRCD(MAX.) tRCD(max.)< tRCD Access Time tRAC(MAX.) tAA(MAX.) tCAC(MAX.) tRAD(MAX.) and tRCD(MAX.) indicate the points which the access time changes and are not the limits of operation. 5. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electric characteristics only. If tWCS tWCS(min.), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWD tCWD(min.),tRWD tRWD (min.) and tAWD tAWD(min.), then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of the data out is indeterminate. 6. tAR, tWCR, and tDHR are referenced to tRAD(max.). 7. tOFF(max.) and tOEZ(max.) define the time at which the output achieves the open circuit condition and are not referenced to VOH or VOL. 8. tCRP(min) requirement should be applicable for RAS , CAS cycle preceded by any cycles. 9. Either tRCH(min.) or tRRH(min.) must be satisfied for a read cycle. 10. tWP(min.) is applicable for late write cycle or read modify write cycle. In early write cycles, tWCH(min.) should be satisfied. 11.This specification is referenced to CAS falling edge in early write cycles and to WE falling edge in late write or read modify write cycles. G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -8- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Read Cycle Note : DIN = OPEN UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. -9- G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Early Write Cycle NOTE : DOUT = OPEN UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 10 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Late Write Cycle ( OE Controlled Write) NOET : DOUT = OPEN UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 11 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Read - Modify - Write Cycle UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 12 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Fast Page Read Cycle UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 13 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Fast Page Early Write Cycle NOTE : DOUT = OPEN UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 14 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Fast Page Mode Late Write Cycle UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 15 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Fast Page Read-Modify-Write Cycle NOTE : DOUT = OPEN UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 16 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) CAS Before RAS Refresh Cycle RAS-Only Refresh Cycle G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 17 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Hidden Refresh Cycle ( Read ) UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 18 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Hidden Refresh Cycle ( Write ) NOTE : DOUT = OPEN UW,LW G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 19 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Ordering Information Part Number GLT41316-30J4 GLT41316-35J4 GLT41316-40J4 GLT41316-45J4 GLT41316-30TC GLT41316-35TC GLT41316-40TC GLT41316-45TC SPEED 30ns 35ns 40ns 45ns 30ns 35ns 40ns 45ns POWER Normal Normal Normal Normal Normal Normal Normal Normal FEATURE FPM FPM FPM FPM FPM FPM FPM FPM PACKAGE SOJ 400mil 40L SOJ 400mil 40L SOJ 400mil 40L SOJ 400mil 40L TSOP 400mil 44L TSOP 400mil 44L TSOP 400mil 44L TSOP 400mil 44L Parts Numbers (Top Mark) Definition : GLT 4 13 4 : DRAM 6 : Standard SRAM 7 : Cache SRAM 8 : Synchronous Burst SRAM -SRAM 064 : 8K 256 : 256K 512 : 512K 100 : 1M -DRAM 10 : 1M(C/EDO)* 11 : 1M(C/FPM)* 12 : 1M(H/EDO)* 13 : 1M(H/FPM)* 20 : 2M(EDO) 21 : 2M(FPM) 40 : 4M(EDO) 41 : 4M(FPM) 80 : 8M(EDO) 81 : 8M(FPM) *See note 16 - 40 J4 CONFIG. 04 : x04 08 : x08 16 : x16 32 : x32 SPEED -SRAM 12 : 12ns 15 : 15ns 20 : 20ns 70 : 70ns -DRAM 30 : 30ns 35 : 35ns 40 : 40ns 45 : 45ns 50 : 50ns 60 : 60ns PACKAGE T : PDIP(300mil) TS : TSOP(Type I) TC : TSOP(Type ll) PL : PLCC FA : 300mil SOP FB : 330mil SOP FC : 445mil SOP J3 : 300mil SOJ J4 : 400mil SOJ P : PDIP(600mil) Q : PQFP TQ : TQFP VOLTAGE Blank : 5V L : 3.3V M : Mix Voltage Note : CUCDROM , HUHDD. Example : 1.GLT710008-15T 1Mbit(128Kx8)15ns 5V SRAM PDIP(300mil)Package type. 2.GLT44016-40J4 4Mbit(256Kx16)40ns 5V DRAM SOJ(400mil)Package type. G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 20 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Package Information 400mil 40 pin Small Outline J-form Package (SOJ) G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 21 - G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) 40/44 Lead Thin Small Outline Package TSOP(Type II) G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 22 - |
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